With the growth of global population and the increase in consumption of electronic devices, how to effectively use electronic devices without exhaustion has become one of the urgent problems of global research. Diodes, such as PN junction, Zener diode, Schottky diode, tunnel diode, crystal diode, light-emitting diode, etc. have been widely studied and applied recently. Say no to plagiarism. Get a tailor-made essay on "Why Violent Video Games Shouldn't Be Banned"? Get an original essay Among these Schottky diodes (SD), the metal-semiconductor (MS) type Schottky diode has attracted much attention due to its high efficiency of electronic devices. However, many of these contacts are not manufactured as MS contacts; They are manufactured as MIS (metal-interlayer-semiconductor) contacts. These structures are fabricated by covering a semiconductor substrate with an organic/inorganic layer on which a metal electrode is deposited. In a MS contact, studies carried out in the literature have shown that the barrier height could be increased or decreased by using an interlayer on the semiconductor substrate. The new electrical properties of MS contacts can be promoted by the choice of a suitable interlayer. Suitable interface layers such as MIS structure based on TiO2, WO3, MoO3, SnO2, In2O3, etc. they were used for switching devices, where the presence of the insulating layer would provide lower leakage current and reduce power consumption. MIS based SBDs have been fabricated with SiO2, Si3 N4, ZrO2 and HfO2 etc. as an insulating layer and conventional metal electrodes (Pt, Cu, Ni, Au etc.). Low leakage current is an important aspect in photodiode. There are also many studies on metal-insulator-semiconductor (MIS) based SBD especially due to the advantage of lower leakage current and higher rectification ratio. Among them molybdenum trioxide (MoO3) has recently attracted rapid interest due to its unique layered structure and is a promising material due to their high electrical conductivity and optical transmittance in the visible region which allows them to be suitable for optoelectronic devices. Phases commonly observed in MoO3 thin films are α-MoO3 (orthorhombic), β-MoO3 (monoclinic), and h-MoO3 (hexagonal). These three phases have different physical and chemical properties, such as good crystal size, refractive index, wide band gap energy, absorbance, electrical conductivity, coloration, transparency and mechanical hardness. In the solid state, hydrated α-MoO3 is composed of double layers of distorted octahedral MoO6 in an orthorhombic crystal, held together by the weak van der Waals force. These MoO3 have been widely used in the fields of solar cells, diodes, gas sensors, batteries, pseudo capacitors and biomedicine. This α-MoO3 phase can be easily obtained in atmospheric atmosphere. Furthermore, MoO3 thin films are prepared by various methods such as atomic layer deposition, spin-coating, chemical vapor deposition (CVD), magnetron sputtering, chemical bath deposition (CBD), and pyrolysis. jet mist spray (JNSP). Among these techniques, JNSP technique has many advantages such as low cost, easy to handle, large area deposition, uniform coating and shorter deposition time. Reported on the influence of metal processing function and Sr atom incorporation on WO3 thin films for SBD using JNSP techniques. Please note: this is just a sample. Get a custom paper from our expert writers now..